CRYSALLINE SILICON SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a crystalline silicon semiconductor device having a layer of polycrystalline silicon that is as a whole uniformly oriented, and a method of manufacturing the same. SOLUTION: A rugged structure is formed on a substrate 1, a metallic catalyser 3 is dispersed to arrange in depressed parts of the ragged structure in a spotty manner, an amorphous silicon layer 4 is formed thereon, crystalline phases 5 with respective orientation are brown from the parts of the metallic catalyser 3 by heat treatment, and the crystalline phases 5 are mutually united by further continuing the treatment to form polycrystalline layer 6.