发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, by which product yield can be improved by preventing the damage of a semiconductor wafer. SOLUTION: In the manufacturing method of the semiconductor device by which conductive sections 7 are formed to electrodes 2 for the external connection of a semiconductor element, the reverse side of the circuit forming surface of the semiconductor wafer 1 under the state, in which a protective film 3 is formed onto the circuit forming surface, is removed and the circuit forming surface is thinned. Through-holes 3a penetrated to the protective film 3 are formed in response to the positions of the electrodes 2 in the protective film 3, and the conductive films 7 electrically conducted with the electrodes 2 are formed into the through-holes 3a and the protective film 3 is removed from the semiconductor wafer 1. Thus, the semiconductor wafer 1 in the case of the formation of the conductive sections is reinforced, and the damage of the semiconductor element can be prevented.
申请公布号 JP2001223232(A) 申请公布日期 2001.08.17
申请号 JP20000030077 申请日期 2000.02.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAKAMI SEIJI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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