发明名称 |
Phase shift mask blank, phase shift mask, and method of manufacture |
摘要 |
A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture. |
申请公布号 |
EP1117000(A3) |
申请公布日期 |
2001.09.05 |
申请号 |
EP20010300236 |
申请日期 |
2001.01.11 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
INAZUKI, YUKIO;KANEKO, HIDEO;MARUYAMA, TAMOTSU;OKAZAKI, SATOSHI |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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