发明名称 DELAY CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide a delay circuit having a stable delay effect with respect to the change of a signal voltage in the delay circuit using a MOS transistor for load capacity. SOLUTION: The gate of a P-type MOS transistor for load capacity 3 and the gate of an N-type MOS transistor for load capacity 4 are connected to a signal line 10. A register 8 and CMOS inverters 5 and 6 apply a boosted voltage higher than a power voltage to the source/drain of the P-type MOS transistor for load capacity 3. A substrate voltage lower than a ground voltage is applied to the source/drain of the N-type MOS transistor for load capacity 4. Thus, a gate voltage range for giving capacity to MOS transistors for load capacity 3 and 4 is enlarged and stable delay effect is displayed to a signal current flowing in the signal line 10.</p>
申请公布号 JP2001251171(A) 申请公布日期 2001.09.14
申请号 JP20000062998 申请日期 2000.03.08
申请人 NEC CORP 发明人 HIROSE YUKITOSHI
分类号 G11C11/4076;H03H11/26;H03K5/00;H03K5/13;H03K19/0948;(IPC1-7):H03K5/13;H03K19/094 主分类号 G11C11/4076
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