发明名称 METHOD FOR FABRICATING PATTERN USING SUPPORTING ASSEMBLY WITH ROLLING MEMBER DISPOSED BELOW SUPPORTING RODS AND SEMICONDUCTOR FABRICATION APPARATUS HAVING THE SUPPORTING ASSEMBLY
摘要 A method for fabricating a pattern on a semiconductor substrate, comprising the steps of: (a) providing the semiconductor substrate having a photosensitive layer thereon; (b) transmitting the semiconductor substrate to an exposure apparatus including several tubes; (c) providing the supporting assembly to support the tubes, where the supporting assembly includes a first supporting rod having several first parallel recesses, a second supporting rod disposed opposite to the first supporting rod, a bridging member connected to one end of the first supporting rod or one end of the second supporting rod; and a rolling member received by the bridging member; (d) providing a photomask to the exposure apparatus; and (e) transferring the pattern from the photomask to the photosensitive layer.
申请公布号 US2016299434(A1) 申请公布日期 2016.10.13
申请号 US201615190165 申请日期 2016.06.22
申请人 UNITED MICROELECTRONICS CORP. 发明人 Wu Chien-Ju;Wu Ming-Sung
分类号 G03F7/20;H01L21/033 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method for fabricating a pattern on a semiconductor substrate, comprising the steps of: (a) providing the semiconductor substrate having a photosensitive layer thereon; (b) transmitting the semiconductor substrate to an exposure apparatus comprising a plurality of tubes; (c) providing a supporting assembly to support the tubes, wherein the supporting assembly comprises: a first supporting rod comprising a plurality of first parallel recesses, wherein the first parallel recesses are configured to receive the tubes;a second supporting rod disposed opposite to the first supporting rod;a bridging member connected to one end of the first supporting rod or one end of the second supporting rod; anda rolling member received by the bridging member; (d) providing a photomask to the exposure apparatus, wherein the photomask comprises a pattern; and (e) transferring the pattern from the photomask to the photosensitive layer.
地址 Hsin-Chu City TW