METHOD OF FORMING FINE PATTERNS

摘要

A method of forming fine patterns includes performing an exposure process to generate acids in first regions of a chemically amplified resist (CAR) layer, removing the exposed first regions using a first development process to form a first resist pattern, diffusing acids in sidewall portions of the first resist pattern into a bulk region of the first resist pattern to form second regions in which the acids are diffused and to form a plurality of third regions between the second regions, and removing the third regions using a second development process to form second resist patterns.

主权项

1. A method of forming fine patterns, the method comprising:
exposing first regions of a chemically amplified resist (CAR) layer to generate acids in the first regions; forming a first resist pattern by first developing the exposed regions to form first opening holes; forming second regions and third regions in the first resist pattern, wherein the second regions are formed by diffusing acids remaining in sidewall portions of the first resist pattern and the third regions are surrounded by the second regions to be isolated from each other; and forming a second resist pattern by second developing the third regions to form second opening holes.