发明名称 |
Method and System for Forming Patterns Using Charged Particle Beam Lithography with Variable Pattern Dosage |
摘要 |
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed. |
申请公布号 |
US2016299422(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615184099 |
申请日期 |
2016.06.16 |
申请人 |
D2S, Inc. |
发明人 |
Fujimura Akira;Zable Harold Robert |
分类号 |
G03F1/78;G03F7/20;G03F1/70 |
主分类号 |
G03F1/78 |
代理机构 |
|
代理人 |
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主权项 |
1. A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots is capable of forming a pattern on a surface, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots. |
地址 |
San Jose CA US |