PATTERN FORMING METHOD

摘要

PURPOSE: A pattern forming method is provided to planarize a comparatively thick film with a thickness of about 10 mu m within a shorter period of time than in the prior art. CONSTITUTION: In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.