| 发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To improve element life in the case of high temperature operation while maintaining high luminous efficiency, in a nitride semiconductor light emitting element. SOLUTION: An active layer 4 including an InxAlyGa1-x-yN (0<x<1, 0<=y<=0.2) light emitting layer is formed by using an organometallic vapor growth method in which the partial pressure of ammonia gas is set as 110 hPa. |
| 申请公布号 |
JP2001332817(A) |
申请公布日期 |
2001.11.30 |
| 申请号 |
JP20000265803 |
申请日期 |
2000.09.01 |
| 申请人 |
NEC CORP |
发明人 |
KURAMOTO MASARU;YAMAGUCHI ATSUSHI |
| 分类号 |
C30B29/38;H01L21/205;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
C30B29/38 |
| 代理机构 |
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