发明名称 MANUFACTURING METHOD OF RESIN-SEALED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem that, when resin-sealed semiconductor devices are individually pressed and are made to separate from a frame main body by breaking in a manufacturing method of the resin-sealed semiconductor devices, which uses a terminal land frame, there is a possibility that the devices are broken in the case where the uniformity of the pressure to the devices is deteriorated. SOLUTION: A terminal land frame provided within the region of a frame main body is connected with the frame main body through the thin thickness part, which is formed by half cutting the frame and has land constituent bodies formed protuberantly more than the frame main body, is used in the manufacturing method of resin-sealed semiconductor devices. After elements are mounted on the terminal land frame, the upper surface of the frame including the elements is sealed from the entire surface, the bottom of the frame is removed by grinding in a state that the frame is pasted on a resin tape material 17 to form a resin-sealed semiconductor device constituent body 19, and the constituent body 19 is cut into the individual resin-sealed semiconductor devices by a rotating blade 20 to separate the devices from each other. As a result, the manufacturing method of the devices, which enhances the productivity of the devices, can be realized.
申请公布号 JP2001332647(A) 申请公布日期 2001.11.30
申请号 JP20000152408 申请日期 2000.05.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NANO MASANORI
分类号 H01L23/28;H01L21/56;H01L23/12;H01L23/50 主分类号 H01L23/28
代理机构 代理人
主权项
地址