| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining an excellent heterojunction characteristic at low temperatures, and a method of manufacturing the same. SOLUTION: The method of manufacturing comprises a step of dipping an n-type single-crystal silicon semiconductor substrate 11 in a solution 13 of a cyano compound to introduce cyano ions onto the surface of the substrate, and a step of laminating an n-type or a p-type amorphous silicon thin film 15 (17) on the n-type substrate 11 to form the heterojunction by allowing an nondoped amorphous silicon thin film 14 (16) to intervene.</p> |
