发明名称 |
Fast recovery diode and method for its manufacture |
摘要 |
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping. |
申请公布号 |
AU6515001(A) |
申请公布日期 |
2001.12.24 |
申请号 |
AU20010065150 |
申请日期 |
2001.05.30 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
RICHARD FRANCIS;CHIU NG |
分类号 |
H01L21/322;H01L21/329;H01L29/861 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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