| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photovoltaic element which has excellent photoelectric characteristics at low cost and at a film forming speed applicable to a process time at an industrially practical level. SOLUTION: The photovoltaic element comprises a substrate having on a base body at least a first laminated transparent conductive layer, a silicon- based semiconductor layer having at least one of pin junctions which is laminated on the substrate, and a second transparent conductive layer 103 laminated on the silicon-based semiconductor layer. In the pin junction of the silicon-based semiconductor layer, there are laminated in succession a foundational layer, an i-type semiconductor layer 102-2 containing a crystal phase, and a second conduction type non-single-crystal semiconductor layer 102-3. Further, in the foundational layer, there are laminated in succession a first conductivity type amorphous semiconductor layer 102-1A and a first conductivity type semiconductor layer 102-1B containing a crystal phase. Moreover, the grain size of the first conductivity type semiconductor layer 102-1B containing a crystal phase is increased toward the i-type semiconductor layer 102-2 containing a crystal phase.</p> |
