METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve reliability and to reduce etching damage to an oxide layer when silicon residue is eliminated, by controlling the increase of a leakage current of a high-voltage metal-oxide-semiconductor field-effect-transistor. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A metal layer is formed on the oxide layer. A pattern of an etching mask is formed on the metal layer. The metal layer not masked by the pattern of the etching mask is etched until the oxide layer under the metal layer is exposed so that silicon residue is left on the oxide layer while metal interconnections(35) are separated. The silicon residue is removed while damage to the oxide layer is reduced.