METHOD FOR MANUFACTURING CYLINDRICAL CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a cylindrical capacitor of a semiconductor device is provided to omit a planarization process of an interlayer dielectric, by forming a photoresist pattern opening only a cell region and by isotropically etching a sacrificial oxide layer, so that a step of the interlayer dielectric between a cell region and a core region is not formed. CONSTITUTION: An interlayer dielectric having a contact plug(204) connected to a source region in a semiconductor substrate(200), is formed on a semiconductor substrate. A sacrificial oxide layer(205) is formed on the entire surface of the contact plug and the interlayer dielectric. The sacrificial oxide layer is anisotropically etched to form a cylindrical opening exposing the contact plug in a cell region in the semiconductor substrate. A conductive material is evaporated on the entire surface of the sacrificial oxide layer having the opening. The conductive material evaporated on the sacrificial oxide layer is eliminated to form a lower electrode(210) separated from another. A mask pattern(211) opening the cell region is formed to isotropically etch the sacrificial oxide layer. The mask pattern is eliminated. A dielectric layer is formed in the cell region. An upper electrode is formed in a portion where the sacrificial oxide layer on the dielectric layer and in a core region is etched.