METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to make uniform anneal effects by emitting laser beams by a method wherein an energy profile of laser beams is made trapezoidal and pulse lasers are scanned in one direction relative to an object to be emitted while emitting. CONSTITUTION: Laser beams oscillated from an oscillator are amplified by an amplifier via total reflection mirrors, and further introduced into an optical system via total reflection mirrors. Beams of laser beams are processed to be linear beams by the optical system. An energy density distribution in a width direction of linear laser beams after passed through the optical system is trapezoidal. After the linear beams are output from the optical system, they are emitted to a sample via total reflection mirrors, but as a width of beams is longer than that of the sample, the laser beams can be emitted to the sample by removing the sample in one direction.