| 摘要 |
PURPOSE: An MRAM configuration is provided to obtain a space-saving architecture and a more efficient MRAM configuration by respectively assigning line driver circuits therein via connecting nodes to two memory cell arrays. CONSTITUTION: A magneto-resistive random access memory (MRAM) configuration includes at least two memory cell arrays, each of said memory cell arrays having word lines WL, bit lines BL crossing the word lines WL, and memory cells disposed at crossover points between the word lines WL and the bit lines BL, connecting nodes(4 or 5), one of the connecting nodes(4,5) disposed between and connecting each of the memory cell arrays to each other, line driver circuits(6,7) connected to at least one of the word lines WL and the bit lines BL, the line driver circuits(6,7) are respectively connected to the connecting nodes(4,5) between the memory cell arrays and switching transistors(13,14) or(15,16), one of the switching transistors(13,14) or(15,16) disposed between one of the memory cell arrays and one of the connecting nodes(4,5) so that the line driver circuits(6,7) are respectively assigned to different ones of the memory cell arrays.
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