| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride compound semiconductor light emitting element having excellent reliability and mass productivitty without machining a substrate or without including a complicated step such as manufacturing step of a contact hole. SOLUTION: The method for manufacturing a semiconductor light emitting element contains an N-type gallium nitride compound semiconductor, an I layer 36 made of a semi-insulating gallium nitride compound semiconductor, and an electrode 40 comprises the steps of forming the electrode 40 on at least the layer 36, and then heat treating the electrode. |
