| 摘要 |
PURPOSE: A photoresist polymer, a photoresist composition containing the polymer, a preparation method of a photoresist pattern using the composition, and a semiconductor device prepared by the method are provided, wherein the polymer is useful for TIPS(Top-surface Imaging Process by Silylation) and a lithography process using ArF(193 nm), VUV(157 nm) and EUV(13 nm) as a light source. CONSTITUTION: The photoresist polymer comprises at least one selected from the compounds of the formulas 1 and 2 as a first monomer; maleic anhydride as a second monomer; and optionally a compound of the formula 3 as a third monomer, wherein n is 0 or 1; R1 and R2 are independent each other and is a protective group sensitive to an acid or hydrogen; and m is 0 or 1. The photoresist composition comprises 100 parts by weight of the photoresist polymer; 0.1-10 parts by weight of a photoacid generator; and 400-1,500 parts by weight of an organic solvent. Preferably the organic solvent is selected from the group consisting of ethyl 3-ethoxy propionate, methyl 3-methoxy propionate, cyclohexanone, propylene glycol methyl ester acetate, n-heptanone and ethyl lactate. |
