发明名称 Semiconductor laser device
摘要 Disclosed is a semiconductor laser device capable of minimizing the spot diameter of a laser light and also capable of improving the transmittance of light passing through a fine aperture. The semiconductor laser device comprises a light absorption film provided with a fine aperture on the outside of the light-emitting surface of the semiconductor laser element. The aperture is formed such that the aperture width W1 in a direction parallel to the polarizing direction of the laser light is smaller than half the oscillation wavelength of the semiconductor laser element, and the aperture width W2 in a direction perpendicular to the polarizing direction is larger than the aperture width W1.
申请公布号 US2002018501(A1) 申请公布日期 2002.02.14
申请号 US20000749801 申请日期 2000.12.28
申请人 HATAKOSHI GENICHI;FURUYAMA HIDETO 发明人 HATAKOSHI GENICHI;FURUYAMA HIDETO
分类号 H01S5/028;H01S5/183;H01S5/323;H01S5/327;(IPC1-7):H01S5/00 主分类号 H01S5/028
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