发明名称 |
Semiconductor laser device |
摘要 |
Disclosed is a semiconductor laser device capable of minimizing the spot diameter of a laser light and also capable of improving the transmittance of light passing through a fine aperture. The semiconductor laser device comprises a light absorption film provided with a fine aperture on the outside of the light-emitting surface of the semiconductor laser element. The aperture is formed such that the aperture width W1 in a direction parallel to the polarizing direction of the laser light is smaller than half the oscillation wavelength of the semiconductor laser element, and the aperture width W2 in a direction perpendicular to the polarizing direction is larger than the aperture width W1.
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申请公布号 |
US2002018501(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20000749801 |
申请日期 |
2000.12.28 |
申请人 |
HATAKOSHI GENICHI;FURUYAMA HIDETO |
发明人 |
HATAKOSHI GENICHI;FURUYAMA HIDETO |
分类号 |
H01S5/028;H01S5/183;H01S5/323;H01S5/327;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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