发明名称 |
Methods of forming field effect transistors and field effect transistor circuitry |
摘要 |
Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and connected between the transistor's gate and the body. A second resistive element is received by the substrate and connected between the body and a reference voltage node. The first and second resistive elements form a voltage divider which is configured to selectively change threshold voltages of the field effect transistor with state changes in the gate voltage. In a preferred embodiment, first and second diode assemblies are positioned over the substrate and connected between the gate and body, and the body and a reference voltage node to provide the voltage divider.
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申请公布号 |
US2002017678(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010956171 |
申请日期 |
2001.09.18 |
申请人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
发明人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
分类号 |
H01L27/07;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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