| 摘要 |
PURPOSE: To conduct testing of a resist pattern formed by an aligner to correct parameters of the aligner on a real-time basis, and to unequivocally discriminate a variance of parameters of the aligner on the basis of the test result to control the parameters of the aligner in high accuracy. CONSTITUTION: A pattern tester 7 is incorporated in a semiconductor production line 1 for performing a lithography step. The line widths of an isolated pattern and an L/S pattern which are exposed by an aligner 4 and are formed on a semiconductor wafer 100, are measured by the pattern tester 7, and, on the basis of the test result, a correction information such as a light quantity correction information for correcting the quantity of exposing light in the aligner 4 or a focus correction information for correcting the alignment focusing position, etc., is generated thereby. Then, the alignment condition of the aligner 4 is corrected according to the correction information generated by the pattern tester 7.
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