| 发明名称 |
ONE-TIME PROGRAMMABLE MEMORY CELL IN CMOS TECHNOLOGY |
| 摘要 |
An OTP memory cell in CMOS technology, including a capacitor associated in series with an unbalanced programming transistor, the drain of which is made of a region deeper and less doped than the source.
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| 申请公布号 |
US2002027822(A1) |
申请公布日期 |
2002.03.07 |
| 申请号 |
US19990470897 |
申请日期 |
1999.12.22 |
| 申请人 |
CANDELIER PHILIPPE;SCHOELLKOPF JEAN-PIERRE |
发明人 |
CANDELIER PHILIPPE;SCHOELLKOPF JEAN-PIERRE |
| 分类号 |
G11C11/404;H01L21/8246;H01L27/112;(IPC1-7):G11C5/00 |
主分类号 |
G11C11/404 |
| 代理机构 |
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