发明名称 THIN FILM FORMING METHOD, THIN FILM FORMING APPARATUS AND SOLAR CELL
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a thin film, which form a thin film of superior film thickness uniformity on a large substrate and furthermore makes throughput high, and to provide a solar cell with a superior characteristic, and moreover, at a low cost. SOLUTION: The apparatus comprising a film forming chamber, inside of which several inductive coupling type electrode with shape of being folded over at the center and having a feeding part of high-frequency power and a grounding part at the each end of themselves, are arranged in parallel in the same plane, a high-frequency power source for supplying high-frequency power to the above feeding part, a means for controlling phase of the high-frequency power supplied to the above feeding part, and a waveform generator for modulating amplitude of the high-frequency power, is characterized by the configuration in which the high-frequency power has opposite phases opposite to each other at the adjacent feeding parts of the above several inductive coupling type electrodes, and in which the amplitude-modulated high-frequency power is supplied to the inductive coupling type electrodes and generates plasma, to form thin film on a substrate arranged so as to face the inductive coupling type electrodes.</p>
申请公布号 JP2002069653(A) 申请公布日期 2002.03.08
申请号 JP20000267554 申请日期 2000.09.04
申请人 ANELVA CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;MATSUDA AKIHISA;KONDO MICHIO 发明人 ITO NORIKAZU;WATABE YOSHI;MATSUDA AKIHISA;KONDO MICHIO
分类号 C23C16/505;H01L21/205;H01L31/04;(IPC1-7):C23C16/505 主分类号 C23C16/505
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