| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and an apparatus where the defects of a pattern on a wafer, a mask for exposure or the like is inspected at a high speed. SOLUTION: In order to inspect the defects of the pattern on the mask M for exposure, a pattern signal S3 is obtained on the basis of secondary electrons 2Ba obtained by two-dimensionally scanning the mask M by an electron beam scanner 2. On the basis of CAD data on the pattern of the mask M, a CAD signal S4 corresponding to a CAD graphic is obtained, in synchronization with the pattern signal S3. On the basis of the comparison result of the mask signal S3 with the CAD signal S4, the defects of the pattern on the mask M are inspected.</p> |
