发明名称 |
METHOD AND SUBSTRATE FOR TESTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING TEST SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To achieve the simplification of a test process and the reduction of testing cost. SOLUTION: The burn-in test of a semiconductor element is performed in such a state that the projected electrodes 12 of the test substrate 10 and the electrical connection electrode 3a of a semiconductor element 3 are bonded under heating and pressure and, when the semiconductor element 3 is peeled from the test substrate 10 after the test of the semiconductor element 3 is completed, the projected electrodes 12 are peeled from the test substrate 10 along with the semiconductor element 3 and the projected electrodes 12 are formed on the semiconductor element 3 to simultaneously perform the test of the semiconductor element 3 and the formation of the projected electrodes 12 to the semiconductor element 3.
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申请公布号 |
JP2002071752(A) |
申请公布日期 |
2002.03.12 |
申请号 |
JP20010208391 |
申请日期 |
2001.07.09 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
HAMAGUCHI TSUNEO;TOSHIDA KENJI;IDETA GORO;ISHIZAKI MITSUNORI;HAYASHI OSAMU;HOSHINOUCHI SUSUMU |
分类号 |
G01R31/26;G01R1/073;H01L21/60;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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