发明名称 Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage
摘要 A comparison circuit compares a reference voltage Vref from a reference voltage generation circuit with an internal power supply voltage VCI on an internal power supply line to provide a signal according to the comparison result. A drive transistor supplies current to the internal power supply line from an external power supply node according to the output signal of the comparison circuit. A resistance element connected between the external power supply node and the output node of the comparison circuit and a resistance element connected between the output node of the comparison circuit and a ground node VSS suppresses the amplitude of an output signal of the comparison circuit. Thus, overdrive of the drive transistor can be suppressed, and a current corresponding to an abrupt change of the internal power supply voltage can be supplied from the external power supply node to the internal power supply line by the amplitude limitation function. Thus, an internal power supply voltage generation circuit is provided superior in high frequency response that can generate an internal power supply voltage stably.
申请公布号 US2002031032(A1) 申请公布日期 2002.03.14
申请号 US20000561816 申请日期 2000.05.01
申请人 OOISHI TSUKASA 发明人 OOISHI TSUKASA
分类号 G11C11/409;G05F1/56;G05F3/24;G11C5/14;G11C11/403;G11C11/407;G11C11/4074;G11C11/408;H03F3/45;(IPC1-7):G11C5/00 主分类号 G11C11/409
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