发明名称 Semiconductor device testing apparatus
摘要 There is provided a semiconductor device testing apparatus that can perform a measurement of an electrical characteristic of a semiconductor device that has many electrodes and operates at high frequency. The semiconductor device testing apparatus comprises: a contact sheet (105) having supply voltage electrodes (107c, 107b) of bump structure on a thin insulator sheet (105a), which contact with a source electrode (100c) and a ground electrode (100b) of a semiconductor device (100), and a first opening (113) located at a position facing a signal (100a) of the semiconductor device (100). A measuring head portion (120) having an elastomer (109) that has a second opening (109a), and a base plate (110) that has a third opening (111) and that holds the contact sheet (105) and the elastomer (109) to match the positions of the first through the third openings; a power source portion (140) supplying power to the semiconductor device (100) through the contact sheet (105); and a probe portion (130) contacting with a signal electrode through the openings.
申请公布号 US2002036514(A1) 申请公布日期 2002.03.28
申请号 US20010956073 申请日期 2001.09.20
申请人 NEC CORPORATION 发明人 TAURA TORU;INOUE HIROBUMI;TANIOKA MICHINOBU;KIMURA TAKAHIRO;MATSUNAGA KOUJI
分类号 G01R31/26;G01R1/06;G01R1/067;G01R31/28;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
代理机构 代理人
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