| 摘要 |
A step of controlling the threshold of a MOS transistor and a step of improving the reliability of a gate insulating film are carried out in one step so that the number of manufacturing steps is decreased. Variation in fixed electric charge by a nitriding treatment to the gate insulating film is used for the control of the threshold of the MOS transistor, so that both the improvement of the reliability of the gate insulating film and the control of the threshold of the MOS transistor can be made by one step.
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