发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: To transfer a designated pattern well even when an exposure light over the wavelength of 200 nm is used in an exposure process using a resist mask. CONSTITUTION: When the exposure process for a semiconductor wafer 1W is carried out using the exposure light over wavelength of 200 nm EXP, a photomask MR on which a shielding light pattern 5 made by laminating a resist film 4a on a light absorbents organic film 3a with light absorbent for the exposure light EXP is placed, is used.
申请公布号 KR20020033040(A) 申请公布日期 2002.05.04
申请号 KR20010048156 申请日期 2001.08.10
申请人 HITACHI, LTD. 发明人 HASEGAWA NORIO;MIYAZAKI KO;MORI KAZUTAKA;TANAKA TOSHIHIKO;TERASAWA TSUNEO
分类号 G03F1/54;G03F1/56;G03F1/58;G03F7/00;G03F7/20;G03F7/22;H01L21/027;H01L21/3205;H01L21/768 主分类号 G03F1/54
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