发明名称 Apparatus for forming thin film using microwave and method therefor
摘要 An apparatus for forming a thin film using microwave and a method therefor are provided. The apparatus for forming a thin film on a wafer by densifying predetermined soot on a wafer, when the wafer and the soot form a sample, includes a microwave sintering furnace for sealing the sample and exposing the sample to microwave, thus sintering the sample, a sintering furnace atmosphere maker for controlling the state, being the atmosphere of air inside the microwave sintering furnace, a temperature sensor/controller for sensing a temperature inside the microwave sintering furnace, comparing the temperature with a predetermined reference temperature, and outputting an error temperature, and a microwave power source for generating microwave of a predetermined temperature with reference to the error temperature output from the temperature sensor/controller and applying the microwave to the microwave sintering furnace. It is possible to rapidly form a film of a fine and uniform structure by densification using microwave.
申请公布号 US6384390(B1) 申请公布日期 2002.05.07
申请号 US20000663418 申请日期 2000.09.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG SUN-TAE;SHIN DONG-WOOK;KIM HYOUN-SOO
分类号 H01L21/205;B01J19/12;C23C16/40;C23C16/44;C23C16/453;C23C16/52;C23C16/56;G05D23/19;H01L21/00;H01L21/31;H01L21/314;H01L21/316;H01L21/3205;(IPC1-7):H05B6/64 主分类号 H01L21/205
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