发明名称 Selective electroplating method employing annular edge ring cathode electrode contact
摘要 Within both a method for forming a patterned photoresist layer and a method for forming an electroplated patterned conductor layer while employing the patterned photoresist layer as a patterned photoresist plating mask layer there is first provided a substrate. There is then formed over the substrate a blanket photoresist layer formed of a negative photoresist material. There is then photoexposed the blanket photoresist layer to form a photoexposed blanket photoresist layer while employing a photoexposure apparatus which employs an annular edge ring exclusion apparatus positioned over an annular edge ring of the blanket photoresist layer and the substrate. Finally, there is then developed the photoexposed blanket photoresist layer to form a patterned photoresist layer having an annular edge ring excluded over the annular edge ring of the substrate. By employing within the context of the present invention the annular edge ring exclusion apparatus, the electroplated patterned conductor layer is formed with enhanced thickness uniformity.
申请公布号 US2002064729(A1) 申请公布日期 2002.05.30
申请号 US20000726740 申请日期 2000.11.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHING KAI-MING;PAN SHENG-LIANG;CHANG HAO-WEI;CHANG CHUN-HONG;CHEN YEN-MING
分类号 C25D7/12;G03F7/20;H01L21/288;H01L21/60;(IPC1-7):C25D7/12;G03C5/56;H05K3/10;H01L21/44 主分类号 C25D7/12
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