Method of forming interlevel dielectric layer of semiconductor device

摘要

A method of forming an interlevel dielectric layer of a semiconductor device includes filling the gap between conductive lines without the generation of voids or cracks. In the method of forming the interlevel dielectric layer of the semiconductor device, a conductive line is formed on a semiconductor substrate. A polysilazane-family SOG layer is deposited on the semiconductor substrate on which the conductive line is formed. The polysilazane-family SOG layer is baked and etched back until the upper part of the conductive line is exposed using a C-F-family gas having a high C to F ratio, resulting in high etch selectivity ratio of the SOG layer to a silicon nitride layer. A silicon oxide layer, serving as an interlevel dielectric layer, is formed by thermally treating the polysilazane-family SOG layer remaining after the etch back process.