| 摘要 |
A HEMT has an InAlAs layer ( 202 ), an InGaAs layer ( 203 ), a multiple delta-doped InAlAs layer ( 204 ) composed of n-type doped layers ( 204 a) and undoped layers ( 204 b) which are alternately stacked, an InP layer ( 205 ), a Schottky gate electrode ( 210 ), a source electrode ( 209 a), and a drain electrode ( 209 b) on an InP substrate ( 201 ). When a current flows in a region (channel region) of the InGaAs layer ( 203 ) adjacent the interface between the InGaAs layer ( 203 ) and the multiple delta-doped InAlAs layer ( 204 ), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple delta-doped InAlAs layer ( 204 ) as a carrier supplying layer is reduced. |
