METHOD FOR FORMING UNDER LAYER USING METAL MASK

摘要

PURPOSE: A method for forming an under layer using a metal mask is provided to deposit the under layer for connecting a sensing element such as an MR element with a terminal part of an electric device by using the metal mask. CONSTITUTION: Two alignments and a plurality of under layer pattern are formed on a part of a metal mask. An interval between the alignments is 100 micro meter to 200 micro meter. An interval between the under layer patterns is 100 micro meter to 500 micro meter. The metal mask is aligned on a wafer(40) by using the alignments of the metal mask. An under layer is laminated on a surface of the wafer(40) along the under layer pattern of the metal mask by blocking the metal mask. A material such as Ni or NiFe is used as the under layer. A desired under layer(45) is formed by removing the metal mask from the substrate.