Method of forming a spin-on-glass insulation layer

摘要

A method of forming a SOG insulation layer of a semiconductor device comprises forming the SOG insulation layer on a substrate having a stepped pattern by using a polysilazane in a solution state, performing a prebake process for removing solvent elements of the insulation layer at a temperature of 50 to 350° C., performing a hard bake process for restraining particles from forming at a temperature of 350 to 500° C., and annealing at a temperature of 600 to 1200° C. The method of the invention further includes planarizing the insulation layer between the hard bake process and the annealing step. Also, the hard bake process can be omitted.