发明名称 POLYMER FOR RESIST AND RESIN COMPOSITION FOR RESIST
摘要 PROBLEM TO BE SOLVED: To provide a photoresist resin which can form a fine pattern with excellent homogeneity and high resolution. SOLUTION: The polymer to be used for the photoresist resin contains at least one kind of monomer unit expressed by formula (I). In the formula, Ra is a hydrogen atom or methyl group, Rb represents one or more substituents which may be same or different and each Rb is a hydrogen atom, methyl group, hydroxyl group which may have protecting groups, carboxyl group which may have protecting groups or oxo group and R1 is a 1-8C straight chain, branched or cyclic hydrocarbon group.
申请公布号 JP2002169290(A) 申请公布日期 2002.06.14
申请号 JP20000368125 申请日期 2000.12.04
申请人 DAICEL CHEM IND LTD 发明人 TSUTSUMI KIYOHARU
分类号 G03F7/039;C08F220/28;C08F222/06;C08F232/08;C08K5/00;C08L101/02;H01L21/027 主分类号 G03F7/039
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