| 摘要 |
An object of the present invention is to provide a semiconductor device having a buried metal wiring structure and a contact structure passing through a film having hydrogen barrier function for electrically connecting respective wiring layers each other and further having a hydrogen diffusing passage allowing hydrogen to reach an interior of the semiconductor device so that an annealing can be performed effectively by using a forming gas and a fabrication method thereof. The hydrogen diffusing passage is provided by providing an opening in a portion of a layer other than a portion thereof immediately below the metal wiring and allows hydrogen to pass the opening to lower layers. |
