| 摘要 |
PURPOSE: A semiconductor device, a circuit board, an electro-optical device, and an electronic apparatus are provided to prevent deterioration with time by increasing in electric field strength and carrier density, generated at the end of a semiconductor film. CONSTITUTION: A gate electrode is made smaller in width than in semiconductor film. An auxiliary gate electrode, which is connected to the gate electrode and located on the gate electrode side, farther away from the semiconductor film than the gate electrode, is provided, and the semiconductor film is set smaller in width than in the auxiliary gate electrode. An intrinsic semiconductor region(14) which is not doped with a dopant is provided to the end(41) of the semiconductor film.
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