| 摘要 |
PURPOSE: A single wafer type cleaning apparatus and a method for cleaning a wafer using the same are provided to increase density of ozone in a cleaning solution and use ozone of high temperature and other cleaning solutions. CONSTITUTION: A wafer is loaded in a chamber(11). A deionized water supply portion is installed at one side of the chamber(11). The deionized water supply portion includes pure water supply sources(D1,D2), valves(V5,V9), and pure water supply lines(13a,13b). A gas injection device(15) injects a gas to the wafer. A gas supply portion supplies the gas to the gas injection device(15). The gas supply portion is formed with has supply sources(G1-G4), a gas line(17a), valves(V1-V8), a mass flow controller(MFC1-MFC5), gas measuring gauges(G1,G2), and a mixer(17b). The mixer(17b) supplies a mixed gas to the gas injection device(15).
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