发明名称 |
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor substrate as a single substrate that is grown so that the substrate has a low defect and a thick film. SOLUTION: The nitride semiconductor is grown on the substrate by changing a growth speed by a hydride vapor growth method or the like, and then the substrate is removed by polishing. |
申请公布号 |
JP2002237458(A) |
申请公布日期 |
2002.08.23 |
申请号 |
JP20010032064 |
申请日期 |
2001.02.08 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
SAKAMOTO KEIJI;KATSURAGI TAKESHI;MORITA DAISUKE |
分类号 |
H01L21/205;H01L21/304;H01L33/12;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|