发明名称 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor substrate as a single substrate that is grown so that the substrate has a low defect and a thick film. SOLUTION: The nitride semiconductor is grown on the substrate by changing a growth speed by a hydride vapor growth method or the like, and then the substrate is removed by polishing.
申请公布号 JP2002237458(A) 申请公布日期 2002.08.23
申请号 JP20010032064 申请日期 2001.02.08
申请人 NICHIA CHEM IND LTD 发明人 SAKAMOTO KEIJI;KATSURAGI TAKESHI;MORITA DAISUKE
分类号 H01L21/205;H01L21/304;H01L33/12;H01L33/32 主分类号 H01L21/205
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