| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor light emitting element which can greatly shift its light emitting wavelength to a long wavelength, even if having e.g. an InxGa1-xN light emitting active layer or a lower mixed crystal ratio of In, has a sufficient life and can select the light emitting wavelength in a wide wavelength range from blue to red, etc. SOLUTION: The light emitting element has a laminate structure comprising a first semiconductor layer 103 having an enough thickness to cause the lattice relaxation on a semiconductor-insulative substrate 101, a second semiconductor layer 104 having a smaller band gap than the first semiconductor and no lattice matching with the first semiconductor on the layer 103, a third semiconductor layer 105 thin enough to allow electrons or holes to tunnel, having a smaller band gap than the first semiconductor on the layer 104 and two layers, i.e., a fourth semiconductor layer 106 forming a p-n junction and a fifth semiconductor layer 107 stacked one above the other on the upside of the layer 105. |
