Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield

摘要

A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance as viewed from a bias power supply relative to an outer periphery of the wafer to a value which is greater than that of a wafer center portion using the electrode which is formed under an insulating film for electrostatically attracting the wafer.