HIGH MOLECULAR COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist material having small absorption at the wavelength of F2 excimer laser light for exposure and capable of easily forming a fine pattern perpendicular to a substrate. SOLUTION: The high molecular compound has repeating units of formula (1) (where A is a divalent organic group and forms a 4-20C cyclic hydrocarbon group together with C atoms which bond at both ends of A, the cyclic hydrocarbon group may be a bridged cyclic group and may contain a heteroatom; R<1> -R<3> are each H, F, a 1-4C alkyl or a 1-4C fluorinated alkyl, at least one of R<1> -R<3> contains F; and R<4> is an acid labile group). The resist material is sensitive to high energy beams and is excellent in sensitivity and resolution at <=200 nm, particularly <=170 nm wavelength and in plasma etching resistance.