发明名称 |
Method of manufacturing insulating layer and semiconductor device including insulating layer, and semiconductor device formed thereby |
摘要 |
A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
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申请公布号 |
US2002130385(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020122272 |
申请日期 |
2002.04.16 |
申请人 |
JUNG WOO-CHAN;JEON JIN-HO;LIM JEON-SIG;YI JONG-SEUNG |
发明人 |
JUNG WOO-CHAN;JEON JIN-HO;LIM JEON-SIG;YI JONG-SEUNG |
分类号 |
C23C16/40;C23C16/56;H01L21/316;(IPC1-7):H01L29/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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