发明名称 METHOD FOR REDUCING DISCHARGE OF PERFLUORO BASE COMPOUND AND SYSTEM FOR THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for reducing the discharge of perfluoro base compounds in a semiconductor manufacturing process consisting of a number of sub-processes. SOLUTION: In the semiconductor manufacturing process consisting of a plurality of sub-processes generating at least one perfluoro base compound, the perfluoro base compounds generated by performing the respective sub- processes are discharged to common lines 22a, 22b, 22c, 22d to produce mixed discharge gas flows, and the mixed discharge gas flows discharged from the respective sub-processes are treated by using individual perfluoro base compounds cleaning systems 24a, 24b, 24c, 24d and are mixed to produce a mixed treated gas flow, and then the above mixed treated gas flow is subjected to wet scrubbing.</p>
申请公布号 JP2002273166(A) 申请公布日期 2002.09.24
申请号 JP20010377454 申请日期 2001.12.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHAE SEUNG-KI;LEE SANG-GON;CHUNG SANG-HYUK;HEO SEONG-JIN
分类号 B01D53/68;B01D53/34;B01D53/70;B01D53/77;C23C16/44;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):B01D53/68;H01L21/306 主分类号 B01D53/68
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