ION IMPLANTER INCLUDING BEAM SENSOR AND METHOD FOR MEASURING DOSE THEREBY

摘要

PURPOSE: An ion implanter including beam sensor and a method for measuring a dose thereby are provided to measure the amount of ion beam without the influence of alien substances and perform a real time operation for a dose of the ion beam scanned to each part of a wafer by using the beam sensor. CONSTITUTION: An ion beam(102) approaches a beam scanner(106) through the first beam path(104). The ion beam(102) is extended by the beam scanner(106). The straightness is added to the extended ion beam(102) by the first correction magnet(108) since the extended ion beam(102) does not have straightness to a wafer(116). The ion beam(102) having the straightness passes through a beam sensor(112). The beam sensor(112) is formed by a ring-shaped magnet. The ion beam(102) passes through the inside of a ring of the beam sensor(112). The amount of the ion beam(102) passing through the inside of the ring of the beam sensor(112) is measured by using a change of magnetic flux formed on the beam sensor(112). The beam sensor(112) is mounted at the outside of the first beam path(104). The second correction magnet(114) is adhered to the beam sensor(112) in order to prevent distortion of a magnetic field due to the first correction magnet(108). The ion beam(102) is scanned to a wafer(106) loaded on a chamber through the beam sensor(112) and the second correction magnet(114).