| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which has high electrode contact properties. SOLUTION: This nitride semiconductor element, which includes a semiconductor layer consisting of a III-nitride semiconductor and a metal electrode for supplying this with carriers, has the first contact layer consisting of a III-nitride semiconductor (Alx Ga1-x )1-y Iny N (0<=x<=1, 0<y<=1) which is stacked between the semiconductor layer and the metal electrode, and the second contact layer, consisting of a III-nitride semiconductor Alx 'Ga1-x 'N (0<=x'<=1) which is stacked between the first contact layer and the metal electrode. |
