发明名称 |
Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor |
摘要 |
An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.
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申请公布号 |
US2002145145(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20020105269 |
申请日期 |
2002.03.26 |
申请人 |
NGK SPARK PLUG CO., LTD. |
发明人 |
NAKASHIMA KENSHIRO;OKUYAMA YASUO;YOKOI HITOSHI;OSHIMA TAKAFUMI |
分类号 |
H01L21/28;H01L21/04;H01L29/24;H01L29/45;H01L29/861;(IPC1-7):H01L31/031 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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