| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor ion sensor capable of forming, in a micro range, a thick ion sensitive film when forming the ion sensitive film with a resin solution and being stably used for a long period. SOLUTION: In this semiconductor ion sensor manufacturing method, the ion sensitive film 2 containing an ion sensitive substance is formed on the surface of a gate oxide film 1. A resin frame 3 is provided in such a way as to surround the gate oxide film 1. The resin solution containing the ion sensitive substance dissolved in a solvent of a free energy smaller than the surface free energy of the resin frame 3 is supplied for inside the resin frame 3. The ion sensitive film 2 is formed of a resin layer 4 obtained by removing the solvent of the resin solution. It is possible to form the resin layer 4 of a thick film thickness by supplying the resin solution without spreading outward over the resin frame 3. |
